صورة | الجزء الرئيسي / الصانع | الوصف / قوات الدفاع الشعبي | الكمية / rfq |
---|---|---|---|
Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
16372الأسهم قطعة |
|
Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
18111الأسهم قطعة |
|
Samsung Semiconductor |
12 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
14254الأسهم قطعة |
|
Samsung Semiconductor |
12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
16007الأسهم قطعة |
|
Samsung Semiconductor |
12 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23219الأسهم قطعة |
|
Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
14653الأسهم قطعة |
|
Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
15796الأسهم قطعة |
|
Samsung Semiconductor |
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
20969الأسهم قطعة |
|
Samsung Semiconductor |
16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
17160الأسهم قطعة |
|
Samsung Semiconductor |
16 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
21953الأسهم قطعة |
|
Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
17994الأسهم قطعة |
|
Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23172الأسهم قطعة |
|
Samsung Semiconductor |
16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
21588الأسهم قطعة |
|
Samsung Semiconductor |
8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
24362الأسهم قطعة |
|
Samsung Semiconductor |
8 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
16747الأسهم قطعة |
|
Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
22839الأسهم قطعة |
|
Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
23654الأسهم قطعة |
|
Samsung Semiconductor |
8 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production. |
22586الأسهم قطعة |
|
Samsung Semiconductor |
32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 95 °C 200FBGA Mass Production. |
14789الأسهم قطعة |
|
Samsung Semiconductor |
32 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production. |
18364الأسهم قطعة |