UnitedSiC UJ3D Series 650V & 1200V SiC Schottky Diodes
UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of SiC superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. These devices feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Qc(Qrr) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949 certified supply chain, making them ideal for automotive applications.
Features
Positive temperature coefficient for safe operation and ease of paralleling175°C maximum operating junction temperatureEasy parallelingExtremely fast switching not dependent on temperatureNo reverse or forward recoveryEnhanced surge current capabilitySuperior thermal performance
Applications
AutomotivePower convertersIndustrial motor drivesTelecom power
Product Catalogs
UnitedSiC Product Selector Guide
Application Notes
Turn-Off Characteristics of SiC JBS Diodes
Quality Certifications
AEC-Q101 Product Qualification Report
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Date: 2018-08-13UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of SiC superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).
Date: 2018-04-26