DDR3


صورة الجزء الرئيسي / الصانع الوصف / قوات الدفاع الشعبي الكمية / rfq
K4B1G0846I-BCK0

K4B1G0846I-BCK0

Samsung Semiconductor

1 Gb 128M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

16579الأسهم قطعة

K4B1G0846I-BCMA

K4B1G0846I-BCMA

Samsung Semiconductor

1 Gb 128M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

17745الأسهم قطعة

K4B1G0846I-BCNB

K4B1G0846I-BCNB

Samsung Semiconductor

1 Gb 128M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

24938الأسهم قطعة

K4B1G0846I-BMK0

K4B1G0846I-BMK0

Samsung Semiconductor

1 Gb 128M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

18031الأسهم قطعة

K4B1G0846I-BMMA

K4B1G0846I-BMMA

Samsung Semiconductor

1 Gb 128M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.

14414الأسهم قطعة

K4B1G0846I-BYK0

K4B1G0846I-BYK0

Samsung Semiconductor

1 Gb 128M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

17047الأسهم قطعة

K4B1G0846I-BYMA

K4B1G0846I-BYMA

Samsung Semiconductor

1 Gb 128M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

14807الأسهم قطعة

K4B1G0846I-BYNB

K4B1G0846I-BYNB

Samsung Semiconductor

1 Gb 128M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.

21953الأسهم قطعة

K4B1G1646I-BCK0

K4B1G1646I-BCK0

Samsung Semiconductor

1 Gb 64M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

25065الأسهم قطعة

K4B1G1646I-BCMA

K4B1G1646I-BCMA

Samsung Semiconductor

1 Gb 64M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

19161الأسهم قطعة

K4B1G1646I-BCNB

K4B1G1646I-BCNB

Samsung Semiconductor

1 Gb 64M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.

19667الأسهم قطعة

K4B1G1646I-BFMA

K4B1G1646I-BFMA

Samsung Semiconductor

1 Gb 64M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

26803الأسهم قطعة

K4B1G1646I-BHMA

K4B1G1646I-BHMA

Samsung Semiconductor

1 Gb 64M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.

21607الأسهم قطعة

K4B1G1646I-BMK0

K4B1G1646I-BMK0

Samsung Semiconductor

1 Gb 64M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

26686الأسهم قطعة

K4B1G1646I-BMMA

K4B1G1646I-BMMA

Samsung Semiconductor

1 Gb 64M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.

15187الأسهم قطعة

K4B1G1646I-BYK0

K4B1G1646I-BYK0

Samsung Semiconductor

1 Gb 64M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

21190الأسهم قطعة

K4B1G1646I-BYMA

K4B1G1646I-BYMA

Samsung Semiconductor

1 Gb 64M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

20093الأسهم قطعة

K4B1G1646I-BYNB

K4B1G1646I-BYNB

Samsung Semiconductor

1 Gb 64M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.

22839الأسهم قطعة

K4B2G0846F-BCK0

K4B2G0846F-BCK0

Samsung Semiconductor

2 Gb 256M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

26738الأسهم قطعة

K4B2G0846F-BCMA

K4B2G0846F-BCMA

Samsung Semiconductor

2 Gb 256M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.

24877الأسهم قطعة